Mechanism of diffusional transport during ion nitriding of aluminum

Abstract

The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400°C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.