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Properties of GaAlAs/GaAs Quantum Well Heterostractures Grown by Metalorganic Chemical Vapor Deposition

  • Burnhan R
  • Streifer W
  • Paoli T
  • et al.
Springer Berlin Heidelberg, (1985), 102-104
DOI: 10.1007/978-3-642-70780-3_20
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Burnhan, R. D., Streifer, W., Paoli, T. L., Thornton, R. L., & Smith, D. L. (1985). Properties of GaAlAs/GaAs Quantum Well Heterostractures Grown by Metalorganic Chemical Vapor Deposition. In Picosecond Electronics and Optoelectronics (pp. 102–104). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_20

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