Interstitial oxygen and dopant atoms arrangement in tin-doped indium oxide

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Abstract

In the present study an attempt to clarify discrepancy between experimental and theoretical results for preference substitution of d or b indium cation sites by tin is performed. For this purpose, the density functional calculations for a number of oxidized and reduced states of ITO with different configurations for tin substituted cation sites are carried out. For reduced states the probability for tin substituants to occupy the b positions is significantly larger than the same value for the d sites. These results indicate that the more favorable occupancy of either b or d cation positions by tin substituent depends on the way of the defect formation. ©2007 Society of Nano Science and Technology.

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Inerbaev, T. M., Sahara, R., Mizuseki, H., Kawazoe, Y., & Nakamura, T. (2007). Interstitial oxygen and dopant atoms arrangement in tin-doped indium oxide. In Materials Transactions (Vol. 48, pp. 666–669). https://doi.org/10.2320/matertrans.48.666

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