A Si(100)/SiO2/HfSiO/TaN/poly-Si gate stack is investigated using analytical electron microscopy and, in particular, electron energy-loss spectroscopy. Oxygen is shown to be present in the TaN layer and at the TaN/poly-Si interface in the form of oxidised TaN and SiO2, respectively. Phase separation of the HfSiO into crystalline HfO2 and amorphous SiO2 is also observed with a resulting widening of the SiO2 layer. PU - SPRINGER-VERLAG BERLIN PI - BERLIN PA - HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
CITATION STYLE
MacKenzie, M., Craven, A. J., McComb, D. W., McGilvery, C. M., McFadzean, S., & Gendt, S. D. (2008). Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate. In Microscopy of Semiconducting Materials 2007 (pp. 313–316). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_68
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