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Fabrication and characterization of a silicon photodetector at 1.55 micron

Lecture Notes in Electrical Engineering (2010) 54 LNEE 113-116
DOI: 10.1007/978-90-481-3606-3_19
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Abstract

In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. © 2010 Springer Science+Business Media B.V.

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Casalino, M., Sirleto, L., Gioffre, M., Coppola, G., Iodice, M., Rendina, I., & Moretti, L. (2010). Fabrication and characterization of a silicon photodetector at 1.55 micron. In Lecture Notes in Electrical Engineering (Vol. 54 LNEE, pp. 113–116). https://doi.org/10.1007/978-90-481-3606-3_19

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