Analysis of ambipolar intrinsic resistance of PIN diode for different semiconductors suitable for power devices

Abstract

The literature of power device must be aware of the fact of proper tradeoff between the choice of semiconductor material and the proper oxide along with it. With the growing semiconductor technology, the traditional semiconductor now has the promising competitor like silicon carbide and gallium nitride. The simulation considers Shockley-Read-Hall recombination model along with ambipolar diffusion mechanism. The analysis proves SiC-3C and SiC-6H as the most promising material for PIN diode manufacturing industries. The intrinsic region width and forward current are varied keeping another parameter constant while determining the resistance. The purpose of this work is to find out the ambipolar intrinsic resistance of PIN diode which will play key role in determining total ambipolar resistance of PIN diode.