Effect of Growth Temperature on Properties of CdZnO Thin Films

Abstract

Ternary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300°C to 600°C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV-Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature.