We present fully self-consistent NEGF calculations for GaAs/InGaAs heterostructures in a regime where multiple scattering, interference, carrier confinement, and carrier capture must be treated on an equal footing. We include the coupling between G< and GR within the device self-consistently and take into account scattering within the leads.
CITATION STYLE
Kubis, T., Trellakis, A., & Vogl, P. (2007). Self-Consistent Quantum Transport Theory of Carrier Capture in Heterostructures. In Nonequilibrium Carrier Dynamics in Semiconductors (pp. 369–372). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_84
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