Structural properties of lattice-mismatched compound semiconductor heterostructures

Abstract

The structural properties of semiconductor heterostructures are determined by the lattice parameter mismatch, the growth technique and the growth conditions. Studying in particular the early stages of the growth by experimental techniques with high spatial resolution (high-resolution transmission electron mi-croscopy, scanning tunneling microscopy)a detailed knowledge of the mechanisms of the epitaxial growth has been achieved. In addition to reviewing some of the most recent results on the mechanisms of the epitaxial growth studies of MBE grown lnxGal_~:As/GaAs(100) and GaAs/Si(100) heterostructures are presented. Focusing on heteroepitaxial systems withlarger misfitswhere the three-dimensional growth modes prevail the different stages ofthe growth, the relaxation of the lattice-parameter mismatch and the development ofthe defect structure have been studied.