In this study, AlGaN/GaN high-electron-mobility transistors with a 5-nm p-GaN cap layer were investigated to compare their performance under various activation conditions. Specifically, p-GaN cap layers were activated using rapid thermal annealing at 700◦C for 5, 10, and 15 min in an N2 environment before device fabrication. The gate leakage current reduced considerably when the p-GaN cap layer activation time was longer. The measured on/off current ratio was improved to 9 × 107 for a Schottky-gate device with 15-min annealing time. The breakdown voltage was increased using the activated p-GaN cap layer. In pulsed I-V measurements, the device with the p-GaN cap layer with a 15-min activation time exhibited less current dispersion.
CITATION STYLE
Li, C.-H., Jiang, Y.-C., Tsai, H.-C., Zhong, Y.-N., & Hsin, Y. (2017). Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer. ECS Journal of Solid State Science and Technology, 6(11), S3125–S3128. https://doi.org/10.1149/2.0281711jss
Mendeley helps you to discover research relevant for your work.