Various structures based on Nickel oxide thick films as Gamma radiation sensors

Abstract

Thick films of Nickel oxide (NiO) in the form of pn-junctions and planar structures with interdigitated electrodes were investigated for γ-radiation dosimetry purposes. Samples were fabricated using the thick film screen-printing technique. All devices were exposed to a disc-type 137Cs source with an activity of 370 kBq. They showed an increase in the values of current with the increase in radiation dose up to a certain level. Performance parameters of the devices, such as sensitivity to γ-radiation exposure and working dose region, were found to be highly dependant on the composition of the materials used. © 2003 by MDPI.