Permeable-base transitors, now in their infancy at MIT-Lincoln Laboratory, just may be one of two leaders in the next generation of transistors. While the other hopeful, the pseudomorphic HEMT, will probably serve low-noise millimeter-wave applications, the PBT will fulfill needs in high-power applications at microwaves and millimeter waves. The PBT's particular strengths seem to indicate that the PBT may be the device of choice for high-power MIMICs.
CITATION STYLE
Pustai, J. (1987). PERMEABLE-BASE TRANSISTOR. Microwaves & RF, 26(3), 173–174, 177. https://doi.org/10.1007/978-3-642-70780-3_6
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