Effect of Unsaturated Sn Atoms on Gas-Sensing Property in Hydrogenated SnO 2 Nanocrystals and Sensing Mechanism

Abstract

Sensing reaction mechanism is crucial for enhancing the sensing performance of semiconductor-based sensing materials. Here we show a new strategy to enhancing sensing performance of SnO2 nanocrystals by increasing the density of unsaturated Sn atoms with dangling bonds at the SnO2 surface through hydrogenation. A concept of the surface unsaturated Sn atoms serving as active sites for the sensing reaction is proposed, and the sensing mechanism is described in detail at atomic and molecule level for the first time. Sensing properties of other metal oxide sensors and catalytic activity of other catalysts may be improved by using the hydrogenation strategy. The concept of the surface unsaturated metal atoms serving as active sites may be very useful for understanding the sensing and catalytic reaction mechanisms and designing advanced sensing sensors, catalysts and photoelectronic devices.