Magnetotransport, magneto-optical, and electronic subband studies in InxGa1-xAs/InyAl1-xAs modulation-doped strained double quantum wells

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Abstract

Magnetotransport and magneto-optical measurements on InxGa1-xAs/InyAl1-yAs modulation-doped strained double quantum wells with a 100 Å In0.8Ga0.2As well and a 100 Å In0.53Ga0.47As quantum wells separated by a 35 A In0.25Ga0.75As potential barrier were carried out to investigate the electrical and the optical properties of the electron gas in the quantum wells. The Shubnikov-de Haas measurements at 1.5 K demonstrated clearly the occupation of three subbands in the quantum wells by a two-dimensional electron gas. The electron effective masses determined from the slopes of the cyclotron resonance peak energies as a function of the magnetic field were 0.06171 and 0.05228me. The electronic subband energies, the subband energy wavefunctions, and the Fermi energy in the quantum wells were self-consistently calculated a transfer matrix method taking into account the exchange-correlation effect, the strain effect, and the nonparabolicity effect, and the results of the cyclotron resonance measurements qualitatively show the nonparabolicity effect in the strained double quantum well. © 1997 American Institute of Physics.

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Kim, T. W., Jung, M., Lee, D. U., Kim, J. H., Yoo, K. H., Lee, J. Y., & Ryu, S. Y. (1997). Magnetotransport, magneto-optical, and electronic subband studies in InxGa1-xAs/InyAl1-xAs modulation-doped strained double quantum wells. Journal of Applied Physics, 82(9), 4388–4393. https://doi.org/10.1063/1.366165

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