A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 μs and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level. © 2012 Elsevier B.V.
CITATION STYLE
Kamiyama, S., Iwaya, M., Takeuchi, T., Akasaki, I., Yakimova, R., & Syväjärvi, M. (2012). White light-emitting diode based on fluorescent SiC. In Thin Solid Films (Vol. 522, pp. 23–25). https://doi.org/10.1016/j.tsf.2012.02.017
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