Circumventing Short Channel Effects in FETs: Review

Abstract

The present paper aims at providing a thorough and yet a collective evaluation of some commendable research works done over the past decade with the aim for reducing short-channel effects (SCE). The necessity for development of these technologies arose as short channel effects such as – Drain-Induced Barrier Lowering (DIBL) and hot carrier effects arises manifold as the channel length is scaled further into the deep-submicron region to accommodate changes in ULSI applications. The review highlights some recent techniques to circumvent these effects in fabricated MOS devices, and in addition a short evaluation of strengths and weakness in each research works is also presented. Keywords Short-Channel effects (SCE), Silicon on Insulator (SOI), Drain Induced Barrier level (DIBL), deep-submicron, ULSI.