Phase-change materials for data storage applications

Abstract

A particular promising approach for data storage devices is based on the fast reversible switching of so-called phase-change materials between an amorphous and a crystalline state. Both phases are characterized by very different material properties, thus providing the contrast required to distinguish between logical states. Phase-change recording was initiated in the 1960s by S.∈Ovshinsky [1] and is the state-of-the-art technique for rewritable optical storage. It is also among the most promising candidates to succeed Flash memory as Phase-Change Random Access memory (PCRAM) [2-4].