A systematic n-type doping study has been performed on 4H- and 6H-SiC epilayers grown at high growth rate using chloride-based CVD. The effect of temperature, pressure, growth rate, C/Si and Cl/Si ratios and dopant flow on the incorporation of the nitrogen and phosphorus donor atoms has been investigated. It is found that the effect of the C/Si ratio on the incorporation of nitrogen or phosphorus atoms is similar to what has been reported for the standard low growth rate process without addition of chlorine. The Cl/Si ratio seems to affect the nitrogen incorporation at growth rates higher than 65 μm/h. The doping concentration is stable against variations in growth rate, growth pressure and growth temperature for the nitrogen-doped layers. © 2008 Elsevier B.V. All rights reserved.
CITATION STYLE
Pedersen, H., Beyer, F. C., Hassan, J., Henry, A., & Janzén, E. (2009). Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD. Journal of Crystal Growth, 311(5), 1321–1327. https://doi.org/10.1016/j.jcrysgro.2008.12.029
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