Novel Low-Temperature CVD Process for Silicon Carbide MEMS

Abstract

A low-temperature, single precursor CVD process for the realization of SiC-based MEMS and SiC-coated MEMS is described using 1,3-disilabutane. With this deposition method, the fabrication of an all-SiC cantilever beam array is demonstrated using standard microfabrication processes. Also, SiC coating of released Si micromechanical structures is realized using this process. The SiC-coated microstructures are shown to have superior chemical stability when compared to their Si analogs, as well as exhibit highly favorable mechanical properties.