Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba 0.5 Sr 0.5 TiO 3 Thin Film

Abstract

SURFACE ROUGHNESS AND GRAIN SIZE CHARACTERIZATION OF ANNEALING TEMPERATURE EFFECT FOR GROWTH GALLIUM AND TANTALUM DOPED Ba 0.5 Sr 0.5 TiO 3 THIN FILM. Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200 o C, 240 o C, 280 o C (low temperature) for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM) method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0.632 nm, 0.564 nm, 0.487 nm for temperature 200 o C, 240 o C, 280 o C, respectively, whereas the grain size (mean diameter) are 238.4 nm, 219.0 nm, 185.1 nm for temperature 200 o C, 240 o C, 280 o C, respectively. In fact, to increase annealing temperature from 200 o C to 280 o C would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature.