This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.
CITATION STYLE
Foisal, A. R. M., Dinh, T., Tanner, P., Phan, H. P., Nguyen, T. K., Iacopi, A., … Dao, D. V. (2019). Ultraviolet and visible photodetection using 3C-SiC/Si hetero-epitaxial junction. In Smart Innovation, Systems and Technologies (Vol. 130, pp. 208–216). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-030-04290-5_22
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