In this paper, the design of logic gates based on GaAs 0.5 µm pHEMT technology is proposed. It uses Depletion-mode-only transistors, which is applicable to technological processes without Enhancement-mode transistors available. An attempt has been made to reduce power consumption by using high-value resistors. Basic logic gates (inverter, NOR, NAND) have been implemented and the topology of flip-flop has been designed, alongside with the NAND gate. The results of this design can be used for any desirable logic circuit, combinational or sequential.
CITATION STYLE
Stesev, G. I., Budanov, D. O., & Balashov, E. V. (2022). Design of GaAs Flip-Flop Using Depletion-Mode-Only Transistors. In Springer Proceedings in Physics (Vol. 268, pp. 235–245). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-030-81119-8_25
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