Design of GaAs Flip-Flop Using Depletion-Mode-Only Transistors

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Abstract

In this paper, the design of logic gates based on GaAs 0.5 µm pHEMT technology is proposed. It uses Depletion-mode-only transistors, which is applicable to technological processes without Enhancement-mode transistors available. An attempt has been made to reduce power consumption by using high-value resistors. Basic logic gates (inverter, NOR, NAND) have been implemented and the topology of flip-flop has been designed, alongside with the NAND gate. The results of this design can be used for any desirable logic circuit, combinational or sequential.

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APA

Stesev, G. I., Budanov, D. O., & Balashov, E. V. (2022). Design of GaAs Flip-Flop Using Depletion-Mode-Only Transistors. In Springer Proceedings in Physics (Vol. 268, pp. 235–245). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-030-81119-8_25

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