Abstract
Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
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CITATION STYLE
APA
Baker, R. J., & Johnson, B. P. (1993). Series operation of power MOSFETs for high-speed, high-voltage switching applications. Review of Scientific Instruments, 64(6), 1655–1656. https://doi.org/10.1063/1.1144043
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