This chapter discusses photonic integration on silicon from the material property, device as well as photonic circuit point of view. The progressive growth of silicon-based electronic integrated circuits (ICs) has followed Moore’s Law and has been driven by the roadmap of conventional electronic ICs. Silicon is arguably the primary host material platform for future photonic integrated circuits (PICs) as well, particularly for applications beyond conventional fiber-optical telecommunications. Until recently, the lack of a laser source on silicon has been seen as the key hur- dle limiting the usefulness and complexity of silicon photonic integrated circuits. In this chapter, we review the numerous efforts including bandgap engineering, Raman scattering, monolithic heteroepitaxy and hybrid integration to realize efficient light emission, amplification and lasing on silicon. The state-of-the-art integration tech- nologies for narrow linewidth lasers and high-speed modulators are also discussed
CITATION STYLE
Venghaus, H., & Grote, N. (2017). Fibre Optic Communication. Key Devices. 2nd Ed. Fibre Optic Communication (p. 873). Springer International Publishing Switzerland. Retrieved from http://dx.doi.org/10.1007/978-3-319-42367-8
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