Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage Applications

Abstract

We present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion (DD) equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stability is achieved, which permits the simulation of devices at cryogenic temperatures as well as wide bandgap devices using double precision arithmetic, instead of extended precision arithmetic which would otherwise be required to solve these applications using regular DD.