Statistical analysis of the influence of temperature on microstructure contact surfaces on Batio3-Ceramics doped with Ho2O3

Abstract

The materials based on BaTiO3can be controlled using different technological parameters and different additives. The influence of different temperature levels of sintering (1320°C, 1350°C and 1380°C) on the size of contact area for 0.1% Ho2O3doped BaTiO3-ceramics has been investigated. Microstructural investigations were carried out using scanning electron microscopy (JEOL-JSM 5300) equipped with EDS (QX 2000S) system. Grain size distribution was determined by quantitative metallography method. The new correlation between microstructure and dielectric properties of doped BaTiO3-ceramics based on fractal geometry and contact surface probability is recently developed. The presented results indicate that statistical model of contact surfaces is important for the prognosis of BaTiO3-ceramics microstructure and dielectric properties.