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Book Chapter

Hydrodynamic simulation of semiconductor devices

  • Rudan M
  • Lorenzini M
  • Brunetti R
Springer US, (1998), 27-57
DOI: 10.1007/978-1-4615-5807-1_2
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Abstract

Recently the hydrodynamic model has become popular in the field of analysis and simulation of semiconductor devices*. The model has the merit of providing, along with the concentration and current density of the carriers, also their average energy and average energy...

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Rudan, M., Lorenzini, M., & Brunetti, R. (1998). Hydrodynamic simulation of semiconductor devices. In Theory of Transport Properties of Semiconductor Nanostructures (pp. 27–57). Springer US. https://doi.org/10.1007/978-1-4615-5807-1_2

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