Impacts of laox doping on the performance of ito/al2 o3 /ito transparent rram devices

Abstract

Fully transparent ITO/LaAlO3 /ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2 O3 /ITO structure devices were set for com-parison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al2 O3 /ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO3 /ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO3 layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.