Operational properties of ridge waveguide lasers with laterally tapered waveguides for monolithic integration

Abstract

We report on a ridge waveguide laser diode with laterally tapered waveguides fabricated in a single growing step using a double patterning method. In this structure, nearly constant output power is obtained with the change of the lower tapered waveguide width, and the facet power ratio of 1.4 to 1.5 is observed over the current range. The asymmetric facet power property is also investigated.