Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Abstract

A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiNx), were used to passivate the heterostructure surface. A 3.5 nm thick SiNx cap is able to maintain the two dimensional electron gas (2DEG) stability in a long period. An AlN/GaN heterostructure with a 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. The carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm2/Vs.