Polycrystalline BaTiO3 thin films have been successfully prepared on (100) silicon substrates at temperatures under 600° C by metal organic chemical vapour deposition using barium acetylacetonate and diisopropoxy-titanium-bis-(acetylacetonate). To vaporize the barium acetylacetonate, which is nonvolatile under 300° C and thermally unstable, an ultrasonic spraying technique was used. The substrate temperature had a great influence on the structure and composition of films and the single-phase BaTiO3 films could be prepared at 500° C. At temperatures above 550° C the reaction between the film and the silicon substrate occurred to a large extent. The polarization-electric field (P-E) hysteresis loops and counter-clockwise direction of hysteresis in the high-frequency (1 MHz)C-V characteristics indicate that the BaTiO3 films deposited on silicon using the present method are ferroelectric. © 1990 Chapman and Hall Ltd.
CITATION STYLE
Lee, C. H., & Park, S. J. (1990). Preparation of ferroelectric BaTiO3 thin films by metal organic chemical vapour deposition. Journal of Materials Science: Materials in Electronics, 1(4), 219–224. https://doi.org/10.1007/BF00696081
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