Manipulating the valley pseudospin in MoS2 transistors

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Abstract

Monolayer MoS2 possess a new valley-pseudospin degree of freedom besides electronic charge and spin. In this talk I will talk about our recent results on optical generation of valley polarization, based on which a novel Hall effect associated with the new degree of freedom is demonstrated. The mechanisms responsible for driving the new valley Hall effect will be discussed. © OSA 2015.

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APA

Mak, K. F. (2015). Manipulating the valley pseudospin in MoS2 transistors. In CLEO: QELS - Fundamental Science, CLEO_QELS 2015 (p. 1551p). Optical Society of America. https://doi.org/10.1364/CLEO_QELS.2015.FM3B.3

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