In the second chapter, general material and transport properties, advantages, and theoretical electrical and thermal limits of III-N materials are presented. Further, the state-of-the-art for nitride-based substrates, materials, electronic devices, and circuits are reviewed systematically.
CITATION STYLE
III-N materials, and the state-of-the-art of devices and circuits. (2008). In Springer Series in Materials Science (Vol. 96, pp. 3–90). Springer Verlag. https://doi.org/10.1007/978-3-540-71892-5_2
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