Sputtering yield measurements

Abstract

The conditions for performing reproducible sputtering measurements are a well-defined ion beam with high enough current and uniform current density, a low enough vacuum and a well characterized target. The different methods to determine total and differential sputtering yields, i.e., the measurement of the loss of target material and the flux of sputtered atoms, are outlined. All available yield data measured for different ions on different materials at normal incidence are depicted on a set of graphs and some are compared with the results of Sigmund's theory. The dependence of the yields on ion-mass, energy and angle of incidence and on target structure and temperature are discussed. For light ion sputtering an empirical analytical formula is given. Energy reflection coefficients, also named sputtering efficiencies are discussed.