Using atomic force microscopy to reveal the nature of extended defects in organic semiconductors: The role of crystal growth mechanisms

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Abstract

Optical and atomic force microscopy measurements on the 001 form of the organic semiconductor quaterthiophene revealed interlaced spiral patterns arising from growth layers mutually rotated by 180° about the normal to the (001) crystal face. This bulk-surface relationship, along with the height of the exposed step ledges of the order of 10-100 nm, evidences the complex polytypic nature of these crystals in which the basic P21/c layer gives rise to several different stacking along [001], even within the same crystallite. The consequences on solid state physical properties arising from these crystal growth phenomena are briefly discussed. © 2007 IOP Publishing Ltd.

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Moret, M., Campione, M., Caprioli, S., Raimondo, L., Sassella, A., Tavazzi, S., & Aquilano, D. (2007). Using atomic force microscopy to reveal the nature of extended defects in organic semiconductors: The role of crystal growth mechanisms. Journal of Physics: Conference Series, 61(1), 831–835. https://doi.org/10.1088/1742-6596/61/1/166

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