On the Synthesis of Unate Symmetric Function Using Memristor-Based Nano-Crossbar Circuit

Abstract

VLSI technology can integrate a large number of electronic components into a single chip. But as per the Moore’s prediction, this technology will soon hit a wall and no further miniaturization of VLSI chips will be possible. Because of this blockade that the technology would soon face, the scientists are turning their focus to emerging nanotechnology. Memristor can be such an alternative, which has the potential of very high speed, smaller size, and minimum power consumption compared to transistor-based technology. Memristor can be considered synonymous to “memory plus resistor” where its internal resistance acts as the data value stored in it, and it has the capability of retaining its previous resistance value even when the power supply is withdrawn. This paper utilizes this unique property of memristor in a new way to simulate unate symmetric functions. Implementation of 3- and 5-input unate symmetric functions are shown in the memristor-based memristor circuit.