Flexible pentacene thin film transistors with cyclo-olefin polymer as a gate dielectric

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Abstract

Flexible pentacene thin film transistors were fabricated and characterized with a hydroxyl-free and amorphous low-k cyclo-olefin polymer (COP) as a gate dielectric. The maximum processing temperature was 60 °C. The spin-coated COP thin films had excellent electrical insulating properties, and the pentacene TFTs showed negligible current hysteresis, a field-effect mobility of 1.60 cm2/Vs, a subthreshold swing of 0.56 V/decade and an on/off ratio of > 106. Furthermore, a small threshold voltage shift below 1.83 V was obtained despite unpassivation of the pentacene layer after a gate bias stress of 104s. These excellent air stabilities were attributed to the insulator with hydroxyl-free and low water absorbency. © 2010 Published by Elsevier B.V.

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Ye, R., Oyama, T., Ohta, K., & Baba, M. (2011). Flexible pentacene thin film transistors with cyclo-olefin polymer as a gate dielectric. In Physics Procedia (Vol. 14, pp. 172–176). Elsevier B.V. https://doi.org/10.1016/j.phpro.2011.05.035

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