GISAXS view of induced morphological changes in nanostructured CeVO 4 thin films

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Abstract

Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, annealing, and introduction of lithium ions, was performed, using the grazing-incidence small-angle X-ray scattering technique (GISAXS). The GISAXS results are discussed and related with complementary examinations of the same films in real space, performed by scanning electron microscopy on a different length scale. © 2011 Magdy Lui Lavevi et al.

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Lucic Lavcevic, M., Turkovi, A., Dubek, P., Crnjak Orel, Z., Orel, B., & Bernstorff, S. (2011). GISAXS view of induced morphological changes in nanostructured CeVO 4 thin films. Journal of Nanomaterials, 2011. https://doi.org/10.1155/2011/303808

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