Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

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Abstract

We report the preparation of transparent Ce and Tb co-doped Y<inf>3</inf>Al<inf>5</inf>O<inf>12</inf> single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet-visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What's more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.

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Gong, M., Xiang, W., Liang, X., Zhong, J., Chen, D., Huang, J., … Xiang, R. (2015). Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode. Journal of Alloys and Compounds, 639, 611–616. https://doi.org/10.1016/j.jallcom.2015.03.162

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