In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.
CITATION STYLE
Wang, Z., Al-Jawhari, H. A., Nayak, P. K., Caraveo-Frescas, J. A., Wei, N., Hedhili, M. N., & Alshareef, H. N. (2015). Low temperature processed Complementary Metal Oxide Semiconductor (CMOS) device by oxidation effect from capping layer. Scientific Reports, 5. https://doi.org/10.1038/srep09617
Mendeley helps you to discover research relevant for your work.