Polysilicon interdigitated electrodes as impedimetric sensors

37Citations
Citations of this article
31Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The suitability of polysilicon as a material for the fabrication of interdigitated electrodes and their application to the development of sensors is studied in this work. The main interest in using this material lies in the possibility of obtaining integrated sensors with commercial CMOS technologies and simple post-processing steps. Electrodes with 3 μm finger width and 3, 10, and 20 μm spacing were fabricated and characterised. Conductivity measurements in the range from 4 to 50 μS/cm yielded a linear response with cell constants of 0.0416 cm-1, 0.155 cm-1 and 0.33 cm-1, respectively. Permittivity measurements in the range from εr = 80.1 to εr = 1.89 yielded a linear response and similar cell constants. The possibility to functionalise both the electrode fingers and the space in between them using a single silanisation process is an interesting advantage of polysilicon electrodes. An urease-based biosensor was obtained with this procedure and characterisation results are reported. © 2006 Elsevier B.V. All rights reserved.

Cite

CITATION STYLE

APA

de la Rica, R., Fernández-Sánchez, C., & Baldi, A. (2006). Polysilicon interdigitated electrodes as impedimetric sensors. Electrochemistry Communications, 8(8), 1239–1244. https://doi.org/10.1016/j.elecom.2006.05.028

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free