In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory

79Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.

Abstract

The HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high-voltage electron microscope. This combination allows experiments involving simultaneous ion irradiation/ion implantation, electron irradiation and electron microscopy/electron diffraction to be performed. In addition the availability of a variety of microscope sample holders permits these as well as other types of in situ experiments to be performed at temperatures ranging from 10 to 1300 K, with the sample in a stressed state or with simultaneous determination of electrical resistivity of the specimen. This article summarizes the details of the Facility which are relevant to simultaneous ion beam material modification and electron microscopy, presents several current applications and briefly describes the straightforward mechanism for potential users to access this US Department of Energy-supported facility. © 1989.

Cite

CITATION STYLE

APA

Allen, C. W., Funk, L. L., Ryan, E. A., & Taylor, A. (1989). In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory. Nuclear Inst. and Methods in Physics Research, B, 4041(PART 1), 553–556. https://doi.org/10.1016/0168-583X(89)91044-6

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free