Ultra low power flow-to-frequency SOI MEMS transducer

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Abstract

Silicon-on-Insulator (SOI) technology, with unique properties such as harsh environment resistance and lower power consumption [1], is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane (3D) movable cantilevers and ring oscillators (RO) circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.

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André, N., Rue, B., Van Vynckt, D., Francis, L. A., Flandre, D., & Raskin, J. P. (2010). Ultra low power flow-to-frequency SOI MEMS transducer. In Procedia Engineering (Vol. 5, pp. 540–543). Elsevier Ltd. https://doi.org/10.1016/j.proeng.2010.09.166

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