Ultra low power flow-to-frequency SOI MEMS transducer

Abstract

Silicon-on-Insulator (SOI) technology, with unique properties such as harsh environment resistance and lower power consumption [1], is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane (3D) movable cantilevers and ring oscillators (RO) circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.