a-Si:H thin film microstructure influenced by HOMOCVD-process parameters

Abstract

Hydrogenated amorphous silicon films prepared by homogeneous chemical vapor deposition (HOMOCVD) process were studied with respect to their microstructure by field-assisted ion exchange (FAIE) techniques. Results concerning the influence of HOMOCVD process parameters such as temperature, gas pressure, flow and substrate temperature are presented. Two series of deposition experiments were carried out: at constant gas phase conditions and at the variable ones. The obtained results showed that the amount of micropores was not determined by the growth rate. This inference is in contrast with the results obtained for plasma CVD a-Si:H. On the basis of the presented results it is possible to choose the deposition conditions, which yield a-Si:H films with the lowest micropore density. © 1993.