Copper doping of GaSb single crystals

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Abstract

For GaSb single crystals doped with copper (grown using the Czochralski method without encapsulant in a flowing atmosphere of hydrogen), the distribution coefficient of copper in GaSb was found to be keff=0.0021±0.0006; the solubility of copper in GaSb is discussed. The region of copper solubility in GaSb was analysed on a thermodynamic basis using chemical phase diagrams for the Sb-Ga-Cu system. Owing to the low solubility of copper, its excessive amount in GaSb probably caused an increase of the dislocation density at the end of the GaSb single crystal. © 1994.

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APA

Šestáková, V., & Štěpánek, B. (1994). Copper doping of GaSb single crystals. Materials Science and Engineering B, 28(1–3), 138–141. https://doi.org/10.1016/0921-5107(94)90033-7

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