Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

  • Ye X
  • Chen Y
  • Xu B
 et al. 
  • 3

    Readers

    Mendeley users who have this article in their library.
  • 17

    Citations

    Citations of this article.

Abstract

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH→1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH→1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. © 2002 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • InGaAs/GaAs quantum wells
  • Indium segregation
  • Reflectance-difference spectroscopy

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Xiaoling Ye

  • Y. H. Chen

  • Bo Xu

  • Z. G. Wang

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free