A secondary gas flow, introduced between source and substrate, has been used in the growth of highly ordered ZnS layers on GaP substrates in a vapour phase open tube transport system. There is a critical ratio of total flow to carrier flow of about three, at which there is a sudden increase in growth rate. Flow visulisation experiments which elucidate this phenomena are described. It is shown that the effect is largely due to diffusion mechanisms, although turbulence in the region of the source material is involved to a lesser extent. © 1976.
Cunningham, D. J., & Lilley, P. (1976). The effect of bypass flows on heteroepitaxial growth of ZnS on GaP. Journal of Crystal Growth, 33(2), 372–376. https://doi.org/10.1016/0022-0248(76)90067-1