Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films

ZHOU, H. (2004). Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films. Microelectronics Journal, 35(7), 571–576. https://doi.org/10.1016/s0026-2692(04)00036-9