The effect of strong inversion in a metal-SiO2-p-Si system has been studied. It is seen that the plot of barrier height versus metal work function of the system becomes nonlinear when the metal work function is lowered below a critical value. These values of critical work function are calculated and analysed for different values of doping and oxide charge. © 1985.
Daw, A. N., & Chattopadhyay, P. (1984). Effect of inversion on barrier height in a metal-SiO2-Si tunnel system. Solid State Electronics, 27(12), 1057–1060. https://doi.org/10.1016/0038-1101(84)90044-3