The effects of absorbed argon on the electrical properties of thin copper films

  • Wilson G
  • Sinha B
  • 2


    Mendeley users who have this article in their library.
  • 9


    Citations of this article.


The electrical resistances of thin copper films formed by thermal evaporation in U.H.V. and in 10-6torr of "Specpure" argon have been measured. The results together with measured values of film thickness have been used to compute values of electronic mean free path and bulk resistivity using the Fuchs-Sonheimer relationship. It has been found that the presence of argon during film formation, although increasing the grain size of the films, produces a marked reduction in mean free path and in film conductivity. This is attributed to the incorporation of argon atoms in the film during its formation. © 1971.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • G. W. Wilson

  • B. P. Sinha

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free