The electrical resistances of thin copper films formed by thermal evaporation in U.H.V. and in 10-6torr of "Specpure" argon have been measured. The results together with measured values of film thickness have been used to compute values of electronic mean free path and bulk resistivity using the Fuchs-Sonheimer relationship. It has been found that the presence of argon during film formation, although increasing the grain size of the films, produces a marked reduction in mean free path and in film conductivity. This is attributed to the incorporation of argon atoms in the film during its formation. © 1971.
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